, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. c4s1 pha*9 control sea telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 500-1900 vol* c4s1 phm* control scr 1400-1500 an?w6?/500.1800 vote c4b1 outihii drawing qrtqhd/dt dhghow* d hetmeto packaging q bio?tont suiga and ft rtflng* dlmmka a b c d e f a h j k l m n p q r s t mm nh. 1.020 1.84s ? .030 .080 .017 .087 .106 jm .118 .004 ? ? . .195 .070 ? 2.219 .137 ?b. 1.068 1.868 2.940 ? _i _ .023 .060 .191 .268 .130 .070 1.600 z.6so .148 .100 1.368 2.343 .183 mfcum hta. 26.90 46.m ? .76 1.z7 .43 1.44 4,72 &28 2,92 1.62 ? ? 3,42 1.77 ? . 31036 3^7 mm. 27.08 47.12 74.68 ? ? .88 1.60 4.88 6/46 130 1.78 45.72 67,31 3.66 2.54 34.42 313.51 3m d power 8uppto? d battaiy chargari q motor control dughtrjimmm d var generators ordering information example select to complete sbc or aevan dgtt part numbar you deato from ihe table - l?i c4wm1 to ? 600 \wt, 1800 ampwo pham corrtrol scr. n? c461 ftmw amm mm vm crt* boo 600 700 800 900 1000 1100 1200 1300 1400 1800 1600 1700 1000 e m 8 n t p pa pa pc po pe pm ps pn km mi 1600 1400 1 2 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolut* maximum rattnge rms on-stale current average on-state current peak one-cycle surge (non repetitive) on-stata currant (60hs) peak one-cycle sum (noivrepetlwa) on-state currant (50hd critical rate-of-fllee of on-state currant (non-repet?ve) critical rata-of-rlae of on-state currant (repetitive) ft (tar rialno), or* cycle at mhz peek date power dissipation . iven igt qate power dnafpenon storage temperature operating temperature mounting porce? . mounting force* svhim itmmn itm him itsh dl/dt di/dt l?t pail pim tno ti mm 8360 1600 23,000 20,800 400 75 2,200,000 200 -40 to 160 -4010126 6600 to 8000 24.6 to 26.7 cni-a 2200 1400 21,000 19,200 400 76 1330,000 200 -40(0150 -40 to 126 5800 to 6000 4.5 to 26.7 (mm amp*nw amperea amparaa amperee amperaa/ua amoaim/ua a*aao watt* watte ?c ?c b. kn elaotrlcal and thermal charactariattea c4im c4h-* current-conducting state maxtamime peak on-state voltage vro tj - 26'c; to - 3000a peak, duty cycle *q.01% 1.70 1.90 vom em vohagablocking state matfmume forward leakage. peak ig* tj - 126'c. v-vmm 46 ma_ reverse leakage, peak _w, tj - 126*0. v - vmu 46 ma switching typical turn-off time t, tj - 12fc. it - 2000a, pulse width - looo uaeo; v* 160 ? gov; dv/dl - 200 v/ueao; unear to .8 vent ovdt - 26a/uaeoi vq - 0. rl - 100o typical delay time b tj - 26'c, h- - 60a. qata supply - 20v; .7 rl - 20o; fhea time - 0.1/uaao mln. critical dv/dt exponential to vqh, dv/dt tj - 128*0,0-avam applied 400 v/uaep madmum thermal resistance,? double ikied coohig junctionrtocaea rm .025 *c/watt caae to sink. lubricated r__, .0076 ?c/wht qate?maximum parametera gate current to trigger w tj - 2s*c, vp - 20vdc. rt - so 200 ma qate voltage to trigger v^ tj - -40 to 126^0, v0 - 20vdc. rl - 3o 5 volte non-triggering qate votlage van, vb - rated vb^ ti - las'c. rl 1qooo .16 votla peak forward qate current ipm 10 amparaa peek reverse gate voltage vmm 6 volte
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